![Subthreshold swing, Additional concepts video lecture by Prof Prof. Sanjiv Sambandan of IISc Bangalore Subthreshold swing, Additional concepts video lecture by Prof Prof. Sanjiv Sambandan of IISc Bangalore](https://i.ytimg.com/vi/FuA54en1SOw/hqdefault.jpg)
Subthreshold swing, Additional concepts video lecture by Prof Prof. Sanjiv Sambandan of IISc Bangalore
![Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fsrep24734/MediaObjects/41598_2016_Article_BFsrep24734_Fig3_HTML.jpg)
Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports
![Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors - Wang - 2020 - Advanced Materials - Wiley Online Library Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors - Wang - 2020 - Advanced Materials - Wiley Online Library](https://onlinelibrary.wiley.com/cms/asset/0e79d27e-344c-4c8d-bf3c-d11d716dc0c7/adma202005353-fig-0001-m.jpg)
Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors - Wang - 2020 - Advanced Materials - Wiley Online Library
![Threshold gate voltage and subthreshold swing of the ultrathin silicon-on-insulator field effect transistor: Analytical model: Journal of Applied Physics: Vol 112, No 12 Threshold gate voltage and subthreshold swing of the ultrathin silicon-on-insulator field effect transistor: Analytical model: Journal of Applied Physics: Vol 112, No 12](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.4770475&id=images/medium/1.4770475.figures.f2.gif)
Threshold gate voltage and subthreshold swing of the ultrathin silicon-on-insulator field effect transistor: Analytical model: Journal of Applied Physics: Vol 112, No 12
Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack - Nanoscale (RSC Publishing)
![Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2 /HfO 2 gate dielectric stack - Nanoscale (RSC Publishing) DOI:10.1039/C7NR00088J Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2 /HfO 2 gate dielectric stack - Nanoscale (RSC Publishing) DOI:10.1039/C7NR00088J](https://pubs.rsc.org/image/article/2017/NR/c7nr00088j/c7nr00088j-t2_hi-res.gif)
Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2 /HfO 2 gate dielectric stack - Nanoscale (RSC Publishing) DOI:10.1039/C7NR00088J
![Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs](https://www.degruyter.com/document/doi/10.1515/psr-2016-0008/asset/graphic/j_psr-2016-0008_fig_016.jpg)
Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs
![Subthreshold swing versus gate length with different t oxf (gate oxide... | Download Scientific Diagram Subthreshold swing versus gate length with different t oxf (gate oxide... | Download Scientific Diagram](https://www.researchgate.net/profile/Guohe-Zhang/publication/258672718/figure/fig6/AS:669312717172755@1536587995727/Subthreshold-swing-versus-gate-length-with-different-t-oxf-gate-oxide-thickness.png)
Subthreshold swing versus gate length with different t oxf (gate oxide... | Download Scientific Diagram
![Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs](https://www.degruyter.com/document/doi/10.1515/psr-2016-0008/asset/graphic/j_psr-2016-0008_fig_023.jpg)
Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs
![Partially Depleted Silicon-on-Ferroelectric Insulator Field Effect Transistor- Parametrization & Design Optimization for Minimum Subthreshold Swing - ScienceDirect Partially Depleted Silicon-on-Ferroelectric Insulator Field Effect Transistor- Parametrization & Design Optimization for Minimum Subthreshold Swing - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0026269215001950-gr1.jpg)
Partially Depleted Silicon-on-Ferroelectric Insulator Field Effect Transistor- Parametrization & Design Optimization for Minimum Subthreshold Swing - ScienceDirect
![how to calculate the threshold voltage and subthreshold swing from Log(Id) - Vg graph | Forum for Electronics how to calculate the threshold voltage and subthreshold swing from Log(Id) - Vg graph | Forum for Electronics](https://obrazki.elektroda.pl/4010132800_1487066040_thumb.jpg)
how to calculate the threshold voltage and subthreshold swing from Log(Id) - Vg graph | Forum for Electronics
![Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor<xref ref-type="fn" rid="cpb141583fn1">*</xref> Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor<xref ref-type="fn" rid="cpb141583fn1">*</xref>](http://cpb.iphy.ac.cn/article/2015/cpb_24_3_037303/cpb141583f5_online.png)
Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor<xref ref-type="fn" rid="cpb141583fn1">*</xref>
![Figure 7 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink Figure 7 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink](https://media.springernature.com/full/springer-static/image/art%3A10.1007%2Fs00542-018-4227-1/MediaObjects/542_2018_4227_Fig7_HTML.png)
Figure 7 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink
![Figure 5 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink Figure 5 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink](https://media.springernature.com/full/springer-static/image/art%3A10.1007%2Fs00542-018-4227-1/MediaObjects/542_2018_4227_Fig5_HTML.png)
Figure 5 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink
![Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors - Wang - 2020 - Advanced Materials - Wiley Online Library Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors - Wang - 2020 - Advanced Materials - Wiley Online Library](https://onlinelibrary.wiley.com/cms/asset/358e1c44-d132-42e0-b786-d9dea6cd0ca5/adma202005353-fig-0002-m.jpg)
Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors - Wang - 2020 - Advanced Materials - Wiley Online Library
![Figure 12 | A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges | SpringerLink Figure 12 | A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges | SpringerLink](https://media.springernature.com/full/springer-static/image/art%3A10.1007%2Fs10825-019-01377-5/MediaObjects/10825_2019_1377_Fig12_HTML.png)
Figure 12 | A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges | SpringerLink
![Subthreshold swing versus gate length with different R p (project range). | Download Scientific Diagram Subthreshold swing versus gate length with different R p (project range). | Download Scientific Diagram](https://www.researchgate.net/profile/Guohe-Zhang/publication/258672718/figure/fig3/AS:669312717180933@1536587995344/Subthreshold-swing-versus-gate-length-with-different-R-p-project-range.png)